Purpose
To recognize outstanding theoretical or experimental work by
a young scientist or engineer.
Eligibility
The nominee must be a young scientist or engineer who has
contributed outstanding theoretical or experimental work, at
least part of which must have been published in an AVS Journal. The nominee must be 35
years of age or less during the year the award is made. The
nominee's thirty-sixth (36) birthday may not precede January 1
of the year in which the award is made. The award shall be
granted without restriction except that current members of the
Board of Directors and the Awards Committee are not
eligible. Applicants for the 2010 Peter Mark Award must have
been born in or after the year 1975.
Nature of the Award
The award consists of a cash award and a certificate
setting forth the reasons for the award, and an honorary
lectureship at a regular session of the International Symposium.
Travel expenses of the awardee to the meeting at which the award
will be presented shall be reimbursed.
Establishment and Support
This award is a memorial to Dr. Peter Mark, who served as Editor
of the Journal of Vacuum Science and Technology from 1975
until his death in 1979. It was established in 1979 with an
initial endowment from the AVS Greater New York Chapter.
Significant additional contributions were made at the time by
Hans and Herman Mark, AVS Electronic Materials and Processing
Division, the Physics of Compound Semiconductor Interfaces
Conference, and several individuals.
Nomination Procedures
Recipients
2009 - Beatriz Roldan Cuenya
"For pioneering contributions to the understanding of
processes taking place in metal nanocluster-catalyzed chemical
reactions."
2008 - Sergei Kalinin
"For pioneering work in the area of nanoelectromechanics and
local properties at surfaces."
2007 - W.M.M. Kessels
"For pioneering work in the application and development of
in situ plasma and surface diagnostics to achieve a molecular
understanding of thin film growth."
2006 - Mark C. Hersam
"For outstanding contributions to the development of
silicon-based molecular electronics."
2005 - Jane P. Chang
"For pioneering work in the synthesis, processing and
characterization of novel materials for applications in
microelectronics and optoelectronics."
2004 - Kathryn W. Guarini
"For development of novel devices and innovative techniques for
nano-pattering using proximal probes and chemical self
assembly."
2003 - Charles H. Ahn
"For pioneering work on epitaxial complex oxide thin film
hetrostructures."
2002 - Rachel S. Goldman
"For contributions to the fundamental understanding of strain
relaxation, alloy formation, diffusion, and the correlations
among microstructure, electronic, and optical properties."
2001 - Eli Rotenberg
"For furthering our knowledge of nanophase and reduced
dimensionality systems by creative use of angle-resolved
photoemission."
2000 - Stacey F. Bent
"For seminal studies of Diels-Alder chemistry at semiconductor
surfaces, and for contributions to a fundamental understanding
of the reaction processes underlying semiconductor growth and
functionalization."
1999 - Eray S. Aydil
"For pioneering work in the development and application of
optical diagnostic techniques to understand the chemistry and
physics associated with plasma deposition of dielectric thin
films."
1998 - David G. Cahill
"For his seminal contributions to the atomic level understanding
of thermal conductivity in thin films and surface
roughening/smoothing mechanisms during film growth and etching."
1997 - Brian S. Swartzentruber
"For pioneering studies of atomic-scale, kinetic and
thermodynamic aspects of the morphology of Si surfaces, and
significant innovations in scanning tunneling microscopy that
make such measurements possible."
1996 - Brian E. Bent
"For seminal research leading to molecular level understanding
of the mechanisms and kinetics of surface chemical reactions
relevant to heterogeneous catalysis and to materials
deposition."
1995 - Emily Carter
"For her pioneering research in combining ab initio quantum
chemistry with molecular dynamics in the study of important
problems in heterogeneous catalysis and semiconductor
processing.
1994 - Marjorie Olmstead
"For elucidating the nature of semiconductor surfaces and the
heteroepitaxial growth of insulating materials on these
surfaces."
1993 - Robert J. Hamers
"For outstanding contributions to the development of scanning
tunneling microscopy and spectroscopy as tools for quantitative
analysis of the electronic properties of surfaces."
1991 - William J. Kaiser
"For innovative applications of electron tunneling techniques."
1990 - Stephen M. Rossnagel
"For contributions to understanding and applications of
magnetron and ion beam sputtering."
1989 - Randall M. Feenstra
"For original applications of scanning tunneling microscopy to
the study of atomic scale geometric and electronic structure of
surfaces."
1988 - Jerry Tersoff
"For innovative approaches to the theoretical understanding of
the electronic structure, properties, and measurement of
surfaces and interfaces."
1987 - Raymond T. Tung
"For his research on the growth and properties of epitaxial
silicides and for major contributions to the understanding of
metal/semiconductor interfaces."
1986 - Richard A. Gottscho
"For his insightful applications of spatially and temporally
resolved spectroscopic techniques to the diagnostics and
modelling of processing plasmas."
1985 - Franz J. Himpsel
"For his contributions to the understanding of the electronic
structure of materials through the use of angle-resolved energy
band mapping, surface core level spectroscopy and inverse
photoemission spectroscopy.
1984 - Barbara J. Garrison
"For developing computer models of ion-solid interactions to
obtain fundamental insights into the collision processes; and to
obtain analytical bonding, and structural information."
1983 - James Chadi
"For innovative, accurate models and theoretical techniques
applied to surface structure determinations."
1982 - Charles W. Magee
"For imaginative developments of secondary ion mass spectrometry
as a qualitative analytical tool for the solution of material
problems."
1981 - Lawrence L. Kazmerski
"For demonstrating the correlation between the electrical and
chemical properties of interfaces in polycrystalline
photovoltaic devices."
1980 - Christopher R. Brundle
"For significant impact on the scientific and technological
community in a wide range of activities, including pioneering
research in the development and application of photoelectron
spectroscopy to surface science and catalysis, publication and
technical leadership."
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